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High‐Temperature Operation of Al _x Ga _1−x N ( x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐ k Atomic Layer Deposited Gate Oxides

https://doi.org/10.1002/pssa.201900802

Mollah, Shahab; Hussain, Kamal; Floyd, Richard; Mamun, Abdullah; Gaevski, Mikhail; Chandrashekhar, MVS; Ahmad, Iftikhar; Simin, Grigory; Wheeler, Virginia; Eddy, Charles; et al (April 2020, physica status solidi (a))

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Trap characterization in ultra-wide bandgap Al _0.65 Ga _0.4 N/Al _0.4 Ga _0.6 N MOSHFET's with ZrO ₂ gate dielectric using optical response and cathodoluminescence

https://doi.org/10.1063/1.5125776

Jewel, Mohi Uddin; Alam, Md Didarul; Mollah, Shahab; Hussain, Kamal; Wheeler, Virginia; Eddy, Charles; Gaevski, Mikhail; Simin, Grigory; Chandrashekhar, MVS; Khan, Asif (November 2019, Applied Physics Letters)

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Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high- k ALD ZrO ₂ dielectric

https://doi.org/10.1088/1361-6641/ab4781

Mollah, Shahab; Gaevski, Mikhail; Chandrashekhar, MVS; Hu, Xuhong; Wheeler, Virginia; Hussain, Kamal; Mamun, Abdullah; Floyd, Richard; Ahmad, Iftikhar; Simin, Grigory; et al (December 2019, Semiconductor Science and Technology)

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Influence of temperature on atomic layer epitaxial growth of indium nitride assessed with in situ grazing incidence small-angle x-ray scattering

https://doi.org/10.1116/1.5081919

Woodward, Jeffrey M.; Rosenberg, Samantha G.; Kozen, Alexander C.; Nepal, Neeraj; Johnson, Scooter D.; Wagenbach, Christa; Rowley, Andrew H.; Robinson, Zachary R.; Joress, Howie; Ludwig, Karl F.; et al (May 2019, Journal of Vacuum Science & Technology A)

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Low temperature surface preparation of GaN substrates for atomic layer epitaxial growth: Assessment of ex situ preparations

https://doi.org/10.1116/1.5080090

Rosenberg, Samantha G.; Pennachio, Daniel J.; Wagenbach, Christa; Johnson, Scooter D.; Nepal, Neeraj; Kozen, Alexander C.; Woodward, Jeffrey M.; Robinson, Zachary; Joress, Howie; Ludwig, Karl F.; et al (March 2019, Journal of Vacuum Science & Technology A)

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